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| Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V = 16 A ID25 RDS(on) = 0.65 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 900 900 20 30 16 64 16 45 1.5 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) G D S 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-264 TO-247 TO-268 TO-264 300 D (TAB) 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 4 10 g g g G = Gate S = Source TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 3.0 5.0 200 TJ = 25C TJ = 125C 50 2 0.65 V V nA mA mA W * IXYS advanced low Qg process * International standard packages * Epoxy meet UL 94 V-0, flammability classification * Low RDS (on) low Qg * Avalanche energy and current rated * Fast intrinsic rectifier Advantages * Easy to mount * Space savings * High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98668 (11/99) (c) 2000 IXYS All rights reserved 1-2 IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 17 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 155 21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 W (External), 24 56 14 133 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 25 67 0.35 TO-247 TO-264 0.25 0.15 170 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test 1.5 2.49 TO-264 AA (IXFK) Outline Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V 1 8 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 60 1.5 250 A A V ns mC A Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 TO-268AA (IXFT) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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